英汉例句

• experimental results of proton irradiation effects are given for floating gate roms.

  给出了浮栅rom器件的质子辐射效应实验结果。

• electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.

  通 过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。

• a first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.

  在浮栅的两侧壁上， 设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。

• the multi-level cell(mlc) technology based on floating gate device and multi-bit in one cell technology based on sonos device are described in the paper.

  文章着重介绍了基于浮栅结构的mlc技术和基于sonos的单管多位技术。

• in particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.

  特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。

• as for the nanocrystal floating gate memory devices, we analyzed the ways to improve the device performances from the point of the device structure and the energy band.

  对纳米晶浮栅结构非易失性存储器的研究中，本文从器件结构和能带的角度出发分析了提高存储器件性能的可能途径。

• impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).

  碰撞电离通过一在一浮栅电荷存储晶体管（11）的衬底（20）中限定一虚 拟二极管（30）的电荷注入器（25）而产生。

• the invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.

  本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方法。

• during a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.

  在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。

• today's flash memory devices use a single floating gate to store an electric charge, which represents data.

  如今的闪存设备是用一个单独的浮置栅极来存储电荷，来保持数据。

• under the nonlinear binding forces the oscillations of a large floating gate are discussed. the harmonious oscillations with large amplitudes on the gate are discovered in the scale model.

  在模型试验时，发现巨型浮体闸门在非线性约束下有大幅度的谐和振蕩。

• the floating gate can only be accessed though another transistor, the control gate.

  浮动门虽然只能进入另一个晶体管，控制闸门。

• the dram further has a floating gate insulated from the surface and is positioned between the first region and the second region.

  所述dram进一步包括与所述表面绝缘的浮栅，且位于所述第一区域和 所述第二区域之间。

• a memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack.

  本发明涉及一种存储器单元结构，使用该存储器单元结构的存储器件以及具有该存储器件的集成电路。

• mechanism of irradiation effects is analyzed for floating gate read only memories (roms). phenomena in experiments are reasonably explained.

  分析了浮栅rom器件的辐射效应机理，合理地解释了实验中观察到的现象。

• the invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.

  同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。

• this work focus on the evolution ways to study the nanocrystal floating gate non-volatile memory devices.

  本文从改进型方案入手，研究了纳米晶浮栅结构的非易失性存储技术。

• electrons are transferred from the floating gate to the p-well region so that the threshold voltage becomes negative, in one possible approach.

  在一种可能的方法中，电子从浮动栅极转移到p阱区，使得阈值电压变为负。

• the extraction methods of gate coupling coefficient of floating gate device mainly aim at no-nignored channel coupling.

  提取浮栅器件栅耦合率的方法一般都是针对不可忽略的沟道耦合现象进行修正。