the formation theory of aluminum-alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed.
叙述了铝背场的作用及形成原理,对影响铝背场表面浓度和结深的参数作了分析。
theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of si color sensor with double pn junction.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
the effect factors such as the buried channel junction depth and substrate doping concentration on the ccd's optimum operating point and maximum charge capacity are analysed.