2026-03-21 18:15 浏览次数 13
低通量
thecomplete annealing temperature of the defects for low fluence irradiated gap was250k lower than that for high fluence irradiated gap.
而高住量辐照样品中观察到比双空位更复杂的缺陷形式,其完全被退火的温度比低剂量辐照的高250k。