片语

minority-carrier trapping少数载流子俘获

minority-carrier storage少数载流子存储

excess minority-carrier density过剩少数载流子密度

excess minority-carrier lifetime过剩少数载流子寿命

excess minority-carrier electron超量少子

minority-carrier recombination lifetime少子复合寿命

minority y carrier少数载流子

minority-carrier exclusion effect少数载流子排斥效应

英汉例句

• the effects of surface thermal oxidation on the minority carrier lifetime of czochralski (cz) silicon wafers are investigated by photoconductive decay (pcd) method.

  用高频光电导衰减法（pcd）研究了热氧化钝化对直拉硅少子寿命的影响。

• in order to increase the minority carrier lifetime, the mechanism of phosphorus gettering is studied.

  研究了为提高基区少子寿命而进行磷吸收的机理。

• this paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.

  本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。

• open circuit voltage decay (ocvd) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.

  开路电压衰减法（ocvd）具有直接、简单、重复性好等特点，可準确测量器件的少数载流子寿命。

• the sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.

  对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。

• it is found that the minority carrier lifetime increases noticeably after phosphorus gettering combined with hydrogen passivation following iron contamination at mid and low temperatures(below 900℃).

  在中、低温（低于900℃以下）情况下被铁沾污后的多晶硅材料经磷吸杂处理后再结合氢钝化可以显着地改善材料的电学性能；

• minority carrier lifetime is an important parameter for pin diodes.

  少子寿命是pin二极管的重要参数。

• all these three ways can improve the minority carrier lifetime effectively.

  三种吸杂方式都能明显提高多晶硅的少子寿命。

• improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.

  本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。

• an improved technique of determining minority carrier generation lifetime in semiconductor from ct transient curve of a mos capacitor under linear voltage ramp bias was developed.

  提出了mos电容线性电压扫描法测量半导体少子产生寿命的新方法。

• using the photovoltaic spectral response of epitaxial p-n junction, the paper suggests a method of determining the minority carrier diffusion length in n layer of n/p epitaxial silicon wafer.

  本文提出了用n/p硅外延片的结光电压光谱响应确定n/p硅外延片中少子扩散长度的方法。

• the minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.

  太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。

• the injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.

  其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。

• because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.

  由于背抛光面对受光面入射光的反射， 使得少子产生率和受光面表面光电压都高于单面抛光片。

• the authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.

  本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；

• in this paper, the condition under which the surface excess minority carrier density may be treated as a constant is also analysed.

  在文中，我们也分析了可以把表面非平衡少子浓度作常数处理的条件。

• using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.

  可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。

• it is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.

  结果表明，当注入水平较高时，少子扩散长度的测量值变长。

• an experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented.

  本文建议子一种由两个不同电压扫描率下的饱和电容值确定产生寿命的实验方法。

• when the grain size is more than 4 times size of film thickness, the influence of grain boundary on minority carrier lifetime can be ignored. the results …

  晶粒尺寸大于薄膜厚度的4倍时 ，晶界复合对载流子寿命的影响可以忽略 ；

• from the ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.

  根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。