英语释义

1. a semiconductor device (such as a diode or a capacitor) in which a metallic oxide (such as silicon dioxide) serves as an insulating layer

片语

metal-oxide-semiconductor structure金属氧化物半导体结构

oxide galss semiconductor氧化物玻璃半导体

oxide e semiconductor氧化物半导体

Meial-Oxide-Semiconductor导体

metal oxide v semiconductor金属氧化物半导体

oxide glass semiconductor氧化物玻璃半导体

英汉例句

• in this novel manner, gate stack edge defects may be physically repaired without deleterious consequences to the electrical behavior of a metal oxide semiconductor device.

  在此创新的方法中，得以实际地修补栅极迭层边缘缺陷，而不会对金属氧化物半导体的电气特性造成有害的影响。

• the present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.

  本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。

• therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.

  如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低成本。

• oxide semiconductor ceramics are new thermoelectric materials used at mid_or high_temperature for potential application in power generation from waste heat.

  氧化物半导体陶瓷材料是新型的中、高温热电材料。

• according to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.

  本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。

• a method of manufacturing a metal oxide semiconductor (500).

  一种制造金属氧化物半导体的方法（500）。

• the metal oxide semiconductor field effect transistor (mosfet) works on a similar principle, but the diode is buried within the mosfet.

  在金属氧化物半导体场效应晶体管（mosfet）的作品在一个类似的原则，但二极管的mosfet内掩埋。

• high mobility p-channel power metal oxide semiconductor field effect transistors.

  高迁移率的p-沟道功率金属氧化物半导体场效应晶体管。

• the cross-section conductance formula, which contains the sensing function of grain-boundaries and grain-necks in porous metal oxide semiconductor gas sensing crystals, is proposed.

  给出了多孔的金属氧化物半导体气敏晶体的既含晶粒间界传感作用又含晶粒缩颈传感作用的截面电导公式。

• the key points of research work were the sensitivity and the lowest detection limit (lod) of metal oxide semiconductor sensor (mos).

  本项目研究并构建了一个医用电子鼻系统，重点研究金属氧化物气体传感器的灵敏度和最低检测限。

• as a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

  其结果，用作电阻元件（354）的氧化物半导体层（905）的电阻值低于用作薄膜晶体管（355）的氧化物半导体层（906）的电阻值。

• the invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.

  本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。

• after heated under air at 400℃, the platinum nanocluster thin films were transformed to optical transmissive, electrically conductive platinum oxide semiconductor thin films.

  该金属钠米簇薄膜经空气中加热处理后可转化为透光导电的氧化铂半导体薄膜。

• the present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.

  本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。

• a process comprises that: firstly, the quasi-one-dimensional metal oxide semiconductor nano-material is synthesized;

  其工艺是：先合成準一维金属氧化物半导体纳米材料；

• therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906.

  因此，对氧化物半导体层（905）引入比氧化物半导体层（906）更高浓度的氢。

• to boot an operating system, the bios runtime searches for devices that are both active and bootable in the order of preference defined by the complementary metal oxide semiconductor (cmos) settings.

  要引导一个操作系统，bios运行时会按照cmos的设置定义的顺序来搜索处于活动状态并且可以引导的设备。

• a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.

  本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。

• provided is a complementary metal oxide semiconductor (cmos) device and a method of manufacturing the same.

  本发明提供了一种互补金属氧化物半导体（cmos）装置及其制造方法。

• a digital circuit comprises: a first arm including a first metal oxide semiconductor field effect transistor (m3) configured to act as a load device;

  一种数字电路，包括：第一支路，包括作为负载器件的第一金属氧化 物半导体场效应晶体管（m3）；

• the electronic device is provided with a semiconductor layer composed of an oxide semiconductor material and an electrode arranged on the semiconductor layer.

  电子装置具有包含氧化物半导体材料的半导体层，和设置在上述半导体层上的电极。

• the first thing the bios does is check the information stored in a tiny (64 bytes) amount of ram located on a complementary metal oxide semiconductor (cmos) chip.

  bios所做的第一件事情是检查存储于位于互补金属氧化物半导体（cmos）芯片上的一块极小（64字节）的ram中的信息。

• this paper summarizes recent development and studies of metal oxide semiconductor gas sensors at home and abroad.

  综述了近期国内外金属氧化物半导体气教传感器的研究和开发进展；

• this configuration forces the pdc master to announce itself as a reliable time source and uses the built-in complementary metal oxide semiconductor (cmos) clock.

  这种配置会强制pdc主机将它自身宣布为可靠的时间源，从而使用内置的互补金属氧化物半导体（cmos）时钟。

• a gate structure of the metal oxide semiconductor is etched (510).

  将金属氧化物半导体的栅极构造蚀刻（510）。