片语

power electronic semiconductor电力半导体功率器件

high-power 808nm semiconductor laser大功率808nm半导体激光器

power bipolar semiconductor devices功率双极半导体器件

Power r semiconductor devices功率半导体原件

power chip Semiconductor Corporation力晶半导体

power electronics semiconductor电力半导体

driving of power-semiconductor功率开关元件

power chip Semiconductor Corp与力晶半导体公司

power chip Semiconductor力晶半导体

英汉例句

• Used for engraving glass, cleaning residue on the sand casting, controlled fermentation, power semiconductor wafer polishing and cleaning corrosion (with HNO3 mixed acid).

  用于雕刻玻璃、清洗铸件上的残砂、控制发酵、电抛光和清洗腐蚀半导体硅片(与HNO3的混酸)。

• In this article, a new analysis method of network topology for power semiconductor swith circuits-method of tensor transformation, is presented.

  提出电力半导体开关电路的网络拓扑分析的一种新方法——张量变换法。

• The simulation results can guide the packaging of the high power semiconductor laser array.

  该模拟结果对大功率半导体激光器阵列的封装设计具有现实的指导意义。

• Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.

  绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。

• One of the key problems is lasers cooling in researching high power semiconductor diode laser arrays.

  大功率半导体激光器列阵研制的关键问题之一就是散热技术。

• IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.

  IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。

• The company is located between the Yangtze River and the Beijing-Hangzhou Grand Canal where it is a beautiful and ideal place for manufacture of power semiconductor devices.

  公司位于长江和京杭大运河交界处，风景优美，是生产功率半导体器件的理想之地。

• Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.

  在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。

• The invention provides a power semiconductor module with improved inner structure, thus at least one power semiconductor element can be protected.

  本发明提供了一种具有改进的内部结构的功率半导体模块，由此也达到保护至少一个功率半导体元件的目的。

• The linear measurement of SDL7432 power semiconductor laser has been discussed in this paper.

  就SDL7432功率型半导体激光器的线性测量进行了讨论。

• It will be used in the illumination system of high power semiconductor laser over a long infrared distance of 100 meters through adjusting an additional geometric optical lens.

  然后通过调节外加的几何光学透镜，在长达100米的红外远距离大功率半导体激光器照明系统中将得到利用。

• The principle of temperature control of high power semiconductor laser for communication and the composition of laser module are described.

  主要叙述通信用大功率半导体激光器温控原理及激光组件的构成。

• Ohmic contact is a critical factor for high power semiconductor lasers.

  欧姆接触的好坏，对高功率半导体激光器至关重要。

• With the development of power semiconductor technology and system integration technology, increasing study has been paid to power device.

  随着功率半导体技术和系统集成技术的不断发展，功率器件得到了越来越广泛的研究。

• The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.

  二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；

• The development of power semiconductor devices is introduced. This Paper presents that the device will develop from high frequency to intelligentize.

  介绍了电力半导体器件的发展，指出了该器件由高频化走向智能化的发展趋势。

• In recent years, considerable progress has been made in the high power semiconductor lasers in China and abroad.

  近年来，国内外在大功率半导体激光器方面的研究均取得了很大的进展。

• Automatic shutoff power semiconductor widely applied in electric circuit such as SM's power, ac variable-frequency power etc. But burning tube often affected its reliability.

  自关断功率半导体器件在步进电机电源、交流变频电源等电子线路中应用广泛，而烧管子问题严重影响自关断器件工作的可靠性。

• VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together.

  VDMOS是微电子技术和电力电子技术融和起来的新一代功率半导体器件。