a positive grid bias and a negative substrate bias voltages are applied to the self-made hot filament chemical vapor deposited (hfcvd) system.
在hfcvd系统中施加栅极偏压和衬底偏压,采用双偏压成核和栅极偏压生长的方法成功制备了高质量的纳米金刚石薄膜。
in this paper, the nucleation process of diamond by filament cvd was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析,从理论上研究了负衬底偏压增强活性离子的流量。
in the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament cvd system was analyzed.
对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
the characteristics and the advantages is discussed of this method, which is capable of improve the diamond growth rate and quality with proper argon atmosphere and negative substrate bias voltage.
该法在保持适当氩气氛和施加衬底负偏压下还可进一步提高金刚石膜的生长速率和质量。