gallium arsenide中文,gallium arsenide的意思,gallium arsenide翻译及用法

2026-04-13 06:58 浏览次数 14

gallium arsenide

英[ˈɡæliəm ˈɑ:sənaid]美[ˈɡæliəm ˈɑrsəˌnaɪd]

[无化] 砷化镓

gallium arsenide 英语释义

英语释义

    1. a synthetic compound GaAs used especially as a semiconducting material

gallium arsenide 例句

英汉例句

  • Single crystal gallium arsenide is a new semiconductor material has developed after germanium and silicon.

    单晶砷化镓材料是继锗、单晶硅之后发展起来的新一代半导体材料。

  • Moreover, gallium arsenide is much more expensive than silicon in the first place.

    另外,最重要的是,镓砷化物比硅贵得多。

  • Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.

    集成电路和各种半导体器件制造中所用的材料,目前主要是硅、锗和砷化镓等单晶体,其中又以硅为最多。

  • He proposes dividing a rubber substrate into squares separated by trenches, and transferring tiny islands of rigid gallium arsenide onto those squares when the rubber is stretched.

    他提议,将这橡胶基片用沟槽分割为正方形的小方格,当这橡胶伸缩的时候,就可以将那些极微小的刚性砷化镓片转移到小方格中。

  • This protects the rigid gallium arsenide components from strain, but the system as a whole is flexible and stretchable.

    这样就可以避免张力对于砷化镓元件损伤,但整个系统却表现出一种柔性。

  • The light source in question is a nanoscale laser, which beams light through a gallium arsenide chip, as shown below.

    我们所讨论的光源是一个纳米级的激光,它通过一个砷化镓芯片发射光线,如下图。

  • Each panel contains small lenses that concentrate sunlight by 400 times onto strips containing gallium arsenide photovoltaic cells.

    每块板上包含的把可以太阳光浓缩400倍的小晶体,主要成分是砷化镓光电池。

  • Each panel contains small lenses that concentrate sunlight by 400 times onto strips containing gallium arsenide photovoltaic cells. Dual-axis trackers follow the sun「s trajectory.

    每块板上包含的把可以太阳光浓缩400倍的小晶体,主要成分是砷化镓光电池。并且跟随太阳轨迹双轴工作。

  • They wanted to build a waveguide, a structure designed to send light in a particular direction, by drilling carefully spaced holes in a gallium arsenide crystal.

    他们只是想通过在砷化镓晶体上鉆一些有着细心安排间距的小孔来制造波导(一种能令光传播到特定方向的结构)。

  • A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers, and the main contamination was gallium arsenide particles in suspension.

    砷化镓晶片生产过程中,产生大量废水,其中主要污染物是悬浮状态的砷化镓微粒。

  • Luxtera」s design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.

    Luxtera的设计消除了使用昂贵的III- V化合物半导体材料(如砷化镓和磷化铟)的必要。

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